InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp Ga It can be used to
$344.43
Description
It can be used to measure the sample's electrical properties at high temperatures
Polish: One side EPI polished
you must sharpen the diamond blade frequently
container and top cover with O-ring
InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp Ga It can be used toInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing
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