Si Wafer (111), 4 " dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm Cases Accessories

Si Wafer (111), 4 " dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm Cases AccessoriesSingle crystal Si Conductivity: N type ( undoped) Resistivity: >5000 ohm CM Size: 4" diameter x 0. 4 mm Orientation: (111) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Mobility: (4890-5360) cm^2/V

Polish:          Double  sides  EPI polished by CMP tecnology with less sub-surface lattice damage

Orientation: Z-cut +/- 0

The dimension of the crossing vise is shown in the picture above

working temperature: 80oC

2% rdg ±10mV)

Size:         5x5x 1

Size:               5x5x5 mm

This wafer container is designed for 4" diameter crystal wafers

Polish: One side optical polished

Size:                     8 mm dia

One KF-40 clamp with rubber O-ring is included