GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm Boron-Nitride on Silicon Conductor type: N-type

Conductor type:              N-type

01) diameter based on a high strength steel wire

9 Ton force

Adjust the height of the sputtering head in the vacuum chamber

GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm Boron-Nitride on Silicon Conductor type: N-typeGaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate. Specifications: Nominal GaN thickness: 0. 20? m 0. 1 ? m Front Surface finish (Ga face): <1nm RMS, As grown, Back surface finish: Silicon ( 111) N type P doped R: 1 10 ohm.