InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US Orientation 100

InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US Orientation 100InP single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" diameter x (0. 3 0. 35) mm Doping: Zn doped Conducting type: S C P Polish: one side polished Resistivity:(3. 24 3. 29)x10^ 1 ohm. cm Mobility: 105 110 cm^2 V. S EPD: N A Carrier Concerntration:(1. 76 1. 81) x10^17 cm^3 Ra(Average Roughness) : <4 nm EPI ready surface and packing

05 to 380 mL/min Peristaltic Pump

24o Bi-STO Substrate Specifications

EPD: <5000/cm^2

<111>° CeO2

Purity:       > 99

one in blue and the other in orange

Adhesive Layer (Carbon Black Mixed): 3

Surface roughness:         < 30 A ( by AFM)

Active Material Proportion in Powder: 97

perovskite solar film

Package Contents:

Edge : Raw Edge ( Scribe and Break)