LaAlO3, (111) 5x5x0.5 mm substrate, one side Epi polished Thin Film Deposition Activation Energy 0

Activation Energy  0

Roughness:<5A Rms

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constant voltage (CV)

LaAlO3, (111) 5x5x0.5 mm substrate, one side Epi polished Thin Film Deposition Activation Energy 0Substrate Specifcations: Wafer Size: 5 x 5 x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (111) + 0. 5 Deg Polishing: One side CMP polished with free sub surface damaged. Surface finish (RMS or Ra) : < 10A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which is normal nature .