GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp Additive

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp AdditiveSpecifications: GaP single crystal wafer Doping: Zn doped Type of conductivity: P type Size: 2" diameter x 0. 45mm Orientation: (111)B Polished: one side polished Resistivity: 4. 2E 1 ohm. cm Mobility: 70 cmE2 Vs Carrier Concentration: 2. 1E17cmE 3 EPD: 2. 6E4 cmE 2 Surface finish (RMS or Ra) : < 8A Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

180  pm/V

Doping:                         Undoped

Material: Copper Foam

Orientation:   (110)  +/-2 degree

Growing Method:   VGF

< 1 hour)  Max

It can adapt various grinding jars from 1

Edge orientation :<110>

Please click here to see Dislocation vs Thickness of GaN template

5kg 280mm 220m 2

and heat insulation materials are not covered by the warranty

Doping:                           Ga doped