Si Wafer (111), 4"dia x 0.45 mm, 1SP, N Type (P doped), resistivity:0.4-0.6ohm-cm Hydrogen Electrolysis & Seawater Desalination Dopant: Intrinsic type

Dopant:  Intrinsic type

Size: 32 mm Dia x0

Orientation:  <100> +/- 2o

Total Thickness: ~84 um (after hot calendaring)

Si Wafer (111), 4"dia x 0.45 mm, 1SP, N Type (P doped), resistivity:0.4-0.6ohm-cm Hydrogen Electrolysis & Seawater Desalination Dopant: Intrinsic typeSingle crystal Si (CZ) Conductivity: N type ( P doped) Resistivity: 0. 4 0. 6 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 45mm Orientation: (111) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro