GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp - GPUa101005S2 Furnaces

GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp - GPUa101005S2 FurnacesGaP single crystal wafer, Size: 10mm x 10 mm x 0. 5 mm, Doping: undoped, Conducting type: N type, Orientation: (100) Polished: two sides Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x1017

Displays total volume dispensed in mL units

8% ( 998) Al2O3 material

Wafer Size:                    3" dia x  0

Density:                              5

the separate order would not fit

Used for 50Ah Li-ion batteries

5m 8x5mm blue FR-PPR tube(Crimper gas inlet)

To achieve the best result

Edge: Hand seamed

Anode Die: 58mm (L) x 45mm (W)

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Mobility: (208-209) cm^2/V