Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm active surface area 5 cm2

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm active surface area 5 cm2Single crystal Si, (CZ) Conductivity: N type ( As doped) Resistivity: 0. 001 0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 525 mm Orientation: <100 > + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal

The top cover is included for better drying after coating

Tube block is available in related products below

Rod-AL is a pair of alumina pushing/supporting rods set for MTI's compact hot pellet press YLJ-HP7

Item Description Li2CO3% 99

the PTFE flange may melt off if the furnace temperature is higher than 500ºC

Size: 2" diameter x (0

Reach vacuums to  < 50 m-torr by   Heavy Duty Double Stage Rotary Vane Vacuum Pump

5 mS/cm ( 25300MPa )  Electronic conductivity (cold pressing) 1×10-8 S/cm  Electrochemical Window 2

Particle Size:    50-100 mesh

and primary batteries)

Applications Excellent cells to build a battery pack

Material:                       Alumina chamber with heating coils embedded