A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Resistivity:4 – digilifeset.online

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InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Resistivity:4

$931.50

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Resistivity:4

Please keep the powder in the vacuum box to avoid moisture

Particle Size

The round side door on each side for easy access to the flange on the furnace

InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Resistivity:42" InSb wafer (N type, Te doped) Size: 2" dia x 0. 5mm thick with thickness tolerance + 25 um Orientation <111>A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier

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