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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US Metal Foam Sheet Roll Core Dimension
![GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2](https://cdn.shopify.com/s/files/1/0533/5600/3482/files/thumb_gaas_206f686e-ffbd-4814-99ab-e6ed19ae0759.jpg?v=1736897488)
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US Metal Foam Sheet Roll Core Dimension
$114.42
Description
Roll Core Dimension
Conductor type:S-I
Weight 9
up to 25mm and compatible with most of the popular coin cell size
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US Metal Foam Sheet Roll Core DimensionGaAs single crystal wafer, PRIME Grade Growing Method: VGF Orientation: (100) 2 degree OFF Toward [101] + 0. 5 deg Size: 2" dia x 0. 485mm Polishing: One side polished Doping: Te doped Conductor type: N type Carrier Concentration: (0. 1 0. 6) x 10^18 cm^3 Mobility: 3500 3600 cm^2 V. S Resistivity: (2. 9 10. 7) E 3 ohm cm EPD: <8000 cm^2 Note: EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP
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