Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating a major advantage over other

a major advantage over other compressing jigs where the clamping force of the split cell weakens once the mechanical jack loses pressure

MTI supplies high quality hot pressed SiC cutting blades with 8" diameter x 0

Working Voltage 208 - 240V AC (single-phase)

Major Flat: A-axis[11-20]+/-0

Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating a major advantage over otherFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 25(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic