Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces

Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 FurnacesFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 0. 25" x 0. 25" x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A Package: Each wafer is packed in 1000 class clean room with 100 grade

Vacuum Storage Chambers

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Application Note If your slurry viscosity is high

Material: Polypropylene

Film Coaters

2 sides polished

Note: These empty cylindrical cells are pre-clamped with the cap only and WITHOUT Cathode and Anode

Temperature control console provides up to 30 segments programmable with +/- 1 ºC accuracy

Mullite tube can be used up to 1650 oC in both oxidizing and reduce atmospheres

Pressure Range: (0

8x25ml Hi-throughput Jar is available upon request

Vacuum pressures may only be safely used up to 1000°C