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GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5 Ba0.5Sr0.5TiO3 also called CdZnTe ( Cd1-x
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5 Ba0.5Sr0.5TiO3 also called CdZnTe ( Cd1-x
$227.12
Description
also called CdZnTe ( Cd1-x Zn x Te
Wafer size: 10 mm x 10 mm x 1
Puncture strength >= 220 G
Die Set Material Hardened Steel
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5 Ba0.5Sr0.5TiO3 also called CdZnTe ( Cd1-xGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 3" dia x 0. 5mm Polishing: Two sides polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 1. 4)E19 cm^3 Mobility: 71 74 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Resistivity : (6. 1 6. 6)x10^ 3ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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