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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm Microwave
$132.22
Description
Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm MicrowaveGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.
Cu Metallic Substrate ( polycrystalline)
Digital Vacuum Gauges and Flow Meters
1 Oz/bag 1 LSS017 Lubricant Tub 1 LSS018 Collection Net Tray 1 IPDB6050505 Arbor Impregnated Diamond Cutting Blades 1 LSS019 6" x 0
Withdraw only
MTI supplies high quality hot pressed SiC cutting blades with 4" diameter x 0
Surface: as Cleavaged
MSK-HRP-01
BOW: <=20 um
Size: 10x10x0
4") 1 LSS006 One Pair of Blade Clams
Be careful: 0
Each set includes 4 types of cutting ring at 8
Shipping Notes
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- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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