Ge Substrate (100)+/-2.5 degree 5x 5x0.5 mm, 1 SP, Undoped, N-type, R: >50 ohm.cm IC Tray Boxes

Ge Substrate (100)+/-2.5 degree 5x 5x0.5 mm, 1 SP, Undoped, N-type, R: >50 ohm.cm IC Tray BoxesSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side epi polished Orientation: (100)+ 2. 5 Degree Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z

made of stainless steel ( SS304) with PP sealing O-ring

Application case

3 microns  with  (thickness acceptation range) +/- 10%

50/60Hz (110V is available via a transformer) Output Power 2 KW

Secondary Flat: EJ(-211)

current are built-in

Drum Collector Rotation speed: 100 - 8000 rpm adjustable

Polish:            two sides optical polished

Light yield [photons/MeVy]

Width:     100mm

This AlF3 layer is thin enough (several angstroms) to allow electron tunneling

(+/-05o) with Standard Flat