2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm Tube Furnaces P: pressure (Mpa) applied to

P: pressure (Mpa) applied to your working piece

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Case OD: 50mm

Thin Film from A-Z

2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm Tube Furnaces P: pressure (Mpa) applied to2" dia. wafer InGaAs EPI on InP (Semi insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi Insulating Wafer size: 2" diameter x 0. 35 mm Both sides polished EPI Film : Lattice matched In Ga alloy layer of N type InGaAs(undoped) Film Thickness : 0. 75 um (+ 20%) Roughness of epi layer is close to 1 mono layer (ML) One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as