GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP Cs

GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP CsGaAs single crystal wafer Growing Method: VGF Orientation: (100) Flat: (01 1) .(011) Size: 100 mm dia x 0. 6mm Polishing: one side polished Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 39 4. 75)E8 Ohm. cm Mobility: 4120 6820 cm^2 v. s. EPD: <5000 cm2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Mufflr Furnaces

Thermal conductivity:                          270 mW / cm

These valves are not recommended for use below 1

please choose coarse (63 microns ) diamond blade at related product below

which can be heated up to 180°C via an independent temperature controller with +/- 1°C accuracy

2mm or less in diameter(clear)

Other Metallic Foams

Please click the picture below to choose a SS or super-alloy tube from 25 mm to 50 mm  ( Pic

Note: By using 24mm and 15mm die

5 lbs Shelf Life 6 months Storage Temperature  40 - 60

Selectable infusion rate units: µL/min and mL/min

Dimension: 13 /18mm x 69mm