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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Surface load: 13
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Surface load: 13
$126.50
Description
Surface load: 13
PTC Thermistor will break the current when heated to 120ºC
e c = 60 (clamped)
Please do not over tighten the three hex screws on the flanges to avoid overpressure incidents
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Surface load: 13Growth method LEC Orientation (411) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side
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