VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm GaN Melting Point ~700-750 °C

Melting Point  ~700-750 °C

Polish: Both sides polished

Automatic Film Coater with 12"W x 24"L Glass Bed and 250mm Adjustable Doctor Blade - MSK-AFA-II

30-200 cc/min

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm GaN Melting Point ~700-750 °CGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 50(+ _0. 3) mm dia x 175(+ _15) microns Surface Polishing: Both sides polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 008 0. 021Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: N A Mobility: N A EPD: