FZ Si Wafer (111), 2" dia x 0.275 mm, 1SP, P type, B doped R>1000 ohm-cm Metal Foils Note: EPI polishing

Note:                            EPI polishing

Resistivity:                         (0

Max Operating time in continuous mode In continuous mode

Oxide Layer: 1 micron

FZ Si Wafer (111), 2" dia x 0.275 mm, 1SP, P type, B doped R>1000 ohm-cm Metal Foils Note: EPI polishingSingle crystal FZ Si Conductive type: P type Boron doped Resistivity: >1000 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2'' diameter x 0. 275 mm Orientation: (111) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw