Home
»
»
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Range 3: 12 mA
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Range 3: 12 mA
$485.88
Description
Range 3: 12 mA
Two standard electrodes (Cathode & Anode) cutting dies are included for immediate use
Capable for KSL-1700X-A4 furnace
3/8" OD larger diameter Alumina tube is made by high purity 99
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Range 3: 12 mAGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Range 3: 12 mA){kind=link}