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GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp Wafer Holders )): 109 - 1011
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp Wafer Holders )): 109 - 1011
$114.42
Description
)): 109 - 1011
Application Notes You may use the liquid rubber to seal the sample to be CIP ( click Pic
Suggest to use laser ablation method to make thin film due to complicated composition
Instruments & Components PTFE Split Cell Mechanical Jig - for preventing electrolyte leakage Dual Channel
GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp Wafer Holders )): 109 - 1011GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 20x20x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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