Si (111) 5x5x0.5mm, 1SP, N-type undoped, R >1000 ohm-cm Processing Tubes Capacity at 1C discharging
$13.46
Description
Capacity at 1C discharging
Total Area: 241 mm L x 200 mm W x 80 um T
64 g/mL at 25 °C (lit
then the single crystal boules and finally the epi-polished substrates in many sizes
Si (111) 5x5x0.5mm, 1SP, N-type undoped, R >1000 ohm-cm Processing Tubes Capacity at 1C dischargingSpecifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1000 ohm cm Size: 5 x 5 x 0. 5 mm Orientation: (111) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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