InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished Orientation -201 Shipping weight 555 lbs with

Shipping weight 555 lbs with dimensions of 75"x45"x85"

opto-electronics and other microelectronics devices

Surface Finish(RMS or Ra):   one side epi polished < 8 A ( by AFM)

Resistant to oxidation and attack by furnace atmospheres

InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished Orientation -201 Shipping weight 555 lbs with10x10x0. 45 mm InSb wafer (N type, Te doped) Size: 10x10x0. 3 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2